{"id":155,"date":"2015-11-25T02:43:00","date_gmt":"2015-11-25T02:43:00","guid":{"rendered":"https:\/\/staging.m-mos.com\/v3\/?page_id=155"},"modified":"2019-09-30T07:30:14","modified_gmt":"2019-09-30T07:30:14","slug":"milestone","status":"publish","type":"page","link":"https:\/\/staging.m-mos.com\/v3\/milestone\/","title":{"rendered":"Milestone"},"content":{"rendered":"<p>[et_pb_section fb_built=&#8221;1&#8243; admin_label=&#8221;section&#8221; _builder_version=&#8221;3.22&#8243; fb_built=&#8221;1&#8243; _i=&#8221;0&#8243; _address=&#8221;0&#8243;][et_pb_row admin_label=&#8221;row&#8221; _builder_version=&#8221;3.25&#8243; background_size=&#8221;initial&#8221; background_position=&#8221;top_left&#8221; background_repeat=&#8221;repeat&#8221; _i=&#8221;0&#8243; _address=&#8221;0.0&#8243;][et_pb_column type=&#8221;4_4&#8243; _builder_version=&#8221;3.25&#8243; custom_padding=&#8221;|||&#8221; _i=&#8221;0&#8243; _address=&#8221;0.0.0&#8243; custom_padding__hover=&#8221;|||&#8221;][et_pb_text admin_label=&#8221;Text&#8221; _builder_version=&#8221;3.27.4&#8243; background_size=&#8221;initial&#8221; background_position=&#8221;top_left&#8221; background_repeat=&#8221;repeat&#8221; use_border_color=&#8221;off&#8221; border_color=&#8221;#ffffff&#8221; border_style=&#8221;solid&#8221; _i=&#8221;0&#8243; _address=&#8221;0.0.0.0&#8243;]<\/p>\n<h3>Milestones<\/h3>\n<p>[\/et_pb_text][\/et_pb_column][\/et_pb_row][et_pb_row admin_label=&#8221;Row&#8221; _builder_version=&#8221;3.25&#8243; background_size=&#8221;initial&#8221; background_position=&#8221;top_left&#8221; background_repeat=&#8221;repeat&#8221; _i=&#8221;1&#8243; _address=&#8221;0.1&#8243;][et_pb_column type=&#8221;4_4&#8243; _builder_version=&#8221;3.25&#8243; custom_padding=&#8221;|||&#8221; _i=&#8221;0&#8243; _address=&#8221;0.1.0&#8243; custom_padding__hover=&#8221;|||&#8221;][et_pb_testimonial author=&#8221;2015&#8243; quote_icon=&#8221;off&#8221; admin_label=&#8221;2015&#8243; _builder_version=&#8221;3.2&#8243; body_text_color=&#8221;#ffffff&#8221; background_color=&#8221;#1e73be&#8221; background_size=&#8221;initial&#8221; background_position=&#8221;top_left&#8221; background_repeat=&#8221;repeat&#8221; custom_css_main_element=&#8221;font-size: 15px;||line-height: 1.5;&#8221; use_border_color=&#8221;off&#8221; border_color=&#8221;#ffffff&#8221; border_style=&#8221;solid&#8221; _i=&#8221;0&#8243; _address=&#8221;0.1.0.0&#8243;]<\/p>\n<ul>\n<li>Release CSP common drain and single chip technology<\/li>\n<li>Release Low Qg technology (\u226430V) N channel in production<\/li>\n<li>Customize projects launched and moved into production<\/li>\n<\/ul>\n<p>[\/et_pb_testimonial][et_pb_testimonial author=&#8221;2013&#8243; quote_icon=&#8221;off&#8221; admin_label=&#8221;2014&#8243; _builder_version=&#8221;3.29.3&#8243; background_color=&#8221;#d6d6d6&#8243; background_size=&#8221;initial&#8221; background_position=&#8221;top_left&#8221; background_repeat=&#8221;repeat&#8221; hover_enabled=&#8221;0&#8243; custom_css_main_element=&#8221;font-size: 15px;||line-height: 1.5;&#8221; use_border_color=&#8221;off&#8221; border_color=&#8221;#ffffff&#8221; border_style=&#8221;solid&#8221; _i=&#8221;1&#8243; _address=&#8221;0.1.0.1&#8243;]<\/p>\n<ul>\n<li>Development of deep trench process which enables the capability of manufacturing Chip Scale Package<\/li>\n<li>Development of Solid State Relay technology.<\/li>\n<\/ul>\n<p>[\/et_pb_testimonial][et_pb_testimonial author=&#8221;2013&#8243; quote_icon=&#8221;off&#8221; admin_label=&#8221;2013&#8243; _builder_version=&#8221;3.2&#8243; body_text_color=&#8221;#ffffff&#8221; background_color=&#8221;#1e73be&#8221; background_size=&#8221;initial&#8221; background_position=&#8221;top_left&#8221; background_repeat=&#8221;repeat&#8221; custom_css_main_element=&#8221;font-size: 15px;||line-height: 1.5;&#8221; use_border_color=&#8221;off&#8221; border_color=&#8221;#ffffff&#8221; border_style=&#8221;solid&#8221; _i=&#8221;2&#8243; _address=&#8221;0.1.0.2&#8243;]<\/p>\n<ul>\n<li>Development of low Qg technology (\u226430V) with Thick Bottom Oxide and Shallow Trench<\/li>\n<li>Development of Stripe Cell Technology for 55V ~ 100V N-Channel Trench MOSFET<\/li>\n<\/ul>\n<p>[\/et_pb_testimonial][et_pb_testimonial author=&#8221;2012&#8243; quote_icon=&#8221;off&#8221; admin_label=&#8221;2012&#8243; _builder_version=&#8221;3.29.3&#8243; hover_enabled=&#8221;0&#8243; custom_css_main_element=&#8221;font-size: 15px;||line-height: 1.5;&#8221; use_border_color=&#8221;off&#8221; border_color=&#8221;#ffffff&#8221; border_style=&#8221;solid&#8221; _i=&#8221;3&#8243; _address=&#8221;0.1.0.3&#8243; background_color=&#8221;#d6d6d6&#8243; background_size=&#8221;initial&#8221; background_position=&#8221;top_left&#8221; background_repeat=&#8221;repeat&#8221;]<\/p>\n<ul>\n<li>Development of Fast Switching ESD devices<\/li>\n<\/ul>\n<p>[\/et_pb_testimonial][et_pb_testimonial author=&#8221;2009-2011&#8243; quote_icon=&#8221;off&#8221; admin_label=&#8221;2009-2011&#8243; _builder_version=&#8221;3.2&#8243; body_text_color=&#8221;#ffffff&#8221; background_color=&#8221;#1e73be&#8221; background_size=&#8221;initial&#8221; background_position=&#8221;top_left&#8221; background_repeat=&#8221;repeat&#8221; custom_css_main_element=&#8221;font-size: 15px;||line-height: 1.5;&#8221; use_border_color=&#8221;off&#8221; border_color=&#8221;#ffffff&#8221; border_style=&#8221;solid&#8221; _i=&#8221;4&#8243; _address=&#8221;0.1.0.4&#8243;]<\/p>\n<ul>\n<li>Development of 2nd generation technology (650Mcell\/in2) with improved specific Rdson and further die size shrink<\/li>\n<\/ul>\n<p>[\/et_pb_testimonial][et_pb_testimonial author=&#8221;2009&#8243; quote_icon=&#8221;off&#8221; admin_label=&#8221;2009&#8243; _builder_version=&#8221;3.29.3&#8243; hover_enabled=&#8221;0&#8243; custom_css_main_element=&#8221;font-size: 15px;||line-height: 1.5;&#8221; use_border_color=&#8221;off&#8221; border_color=&#8221;#ffffff&#8221; border_style=&#8221;solid&#8221; _i=&#8221;5&#8243; _address=&#8221;0.1.0.5&#8243; background_color=&#8221;#d6d6d6&#8243; background_size=&#8221;initial&#8221; background_position=&#8221;top_left&#8221; background_repeat=&#8221;repeat&#8221;]<\/p>\n<ul>\n<li>ISO9001 :2008 Audit and \u00a0Certification<\/li>\n<li>Started development of automotive quality MOSFET and 600V IGBT, target to be released in 2010<\/li>\n<li>11 new products introduced in 2009<\/li>\n<li>Release next generation products with improved specific Rdson and further die size shrink<\/li>\n<\/ul>\n<p>[\/et_pb_testimonial][et_pb_testimonial author=&#8221;2008&#8243; quote_icon=&#8221;off&#8221; admin_label=&#8221;2008&#8243; _builder_version=&#8221;3.2&#8243; body_text_color=&#8221;#ffffff&#8221; background_color=&#8221;#1e73be&#8221; background_size=&#8221;initial&#8221; background_position=&#8221;top_left&#8221; background_repeat=&#8221;repeat&#8221; custom_css_main_element=&#8221;font-size: 15px;||line-height: 1.5;&#8221; use_border_color=&#8221;off&#8221; border_color=&#8221;#ffffff&#8221; border_style=&#8221;solid&#8221; _i=&#8221;6&#8243; _address=&#8221;0.1.0.6&#8243;]<\/p>\n<ul>\n<li>Company Registration for M-MOS Semiconductor Hong Kong Ltd. as headquarters and subsidiary of Xtrion N.V.<\/li>\n<li>22 new products introduced in 2008<\/li>\n<li>Officially setup M-MOS Semiconductor Sdn. Bhd. as subsidiary of M-MOS Semiconductor Hong Kong Ltd.<\/li>\n<li>Setup M-MOS Semiconductor Hong Kong Ltd., Taiwan Branch.<\/li>\n<\/ul>\n<p>[\/et_pb_testimonial][et_pb_testimonial author=&#8221;2007&#8243; quote_icon=&#8221;off&#8221; admin_label=&#8221;2007&#8243; _builder_version=&#8221;3.29.3&#8243; hover_enabled=&#8221;0&#8243; custom_css_main_element=&#8221;font-size: 15px;||line-height: 1.5;&#8221; use_border_color=&#8221;off&#8221; border_color=&#8221;#ffffff&#8221; border_style=&#8221;solid&#8221; _i=&#8221;7&#8243; _address=&#8221;0.1.0.7&#8243; background_color=&#8221;#d6d6d6&#8243; background_size=&#8221;initial&#8221; background_position=&#8221;top_left&#8221; background_repeat=&#8221;repeat&#8221;]<\/p>\n<ul>\n<li>Production ramp up to &gt;6Kwafers\/month<\/li>\n<li>Total 58 products launched to date<\/li>\n<\/ul>\n<p>[\/et_pb_testimonial][et_pb_testimonial author=&#8221;2006&#8243; quote_icon=&#8221;off&#8221; admin_label=&#8221;2006&#8243; _builder_version=&#8221;3.2&#8243; body_text_color=&#8221;#ffffff&#8221; background_color=&#8221;#1e73be&#8221; background_size=&#8221;initial&#8221; background_position=&#8221;top_left&#8221; background_repeat=&#8221;repeat&#8221; custom_css_main_element=&#8221;font-size: 15px;||line-height: 1.5;&#8221; use_border_color=&#8221;off&#8221; border_color=&#8221;#ffffff&#8221; border_style=&#8221;solid&#8221; _i=&#8221;8&#8243; _address=&#8221;0.1.0.8&#8243;]<\/p>\n<ul>\n<li>ISO9001 :2000 Audit and Certification<\/li>\n<li>Development of 500M Cell\/in\u00b2 low voltage (40V \u2013 75V) Trench MOSFET<\/li>\n<li>Monolithically integrated MOSFET with ESD<\/li>\n<\/ul>\n<p>[\/et_pb_testimonial][et_pb_testimonial author=&#8221;2005&#8243; quote_icon=&#8221;off&#8221; admin_label=&#8221;2005&#8243; _builder_version=&#8221;3.29.3&#8243; hover_enabled=&#8221;0&#8243; custom_css_main_element=&#8221;font-size: 15px;||line-height: 1.5;&#8221; use_border_color=&#8221;off&#8221; border_color=&#8221;#ffffff&#8221; border_style=&#8221;solid&#8221; _i=&#8221;9&#8243; _address=&#8221;0.1.0.9&#8243; background_color=&#8221;#d6d6d6&#8243; background_size=&#8221;initial&#8221; background_position=&#8221;top_left&#8221; background_repeat=&#8221;repeat&#8221;]<\/p>\n<ul>\n<li>Proven 500 Mcell\/in\u00b2 technology for low Voltage ( &lt;50V) N and P Channels<\/li>\n<li>1st Product Launching in 2Q05<\/li>\n<li>Mass production started in 4Q05<\/li>\n<li>Total 7 products launched in 2005<\/li>\n<\/ul>\n<p>[\/et_pb_testimonial][et_pb_testimonial author=&#8221;2004&#8243; quote_icon=&#8221;off&#8221; admin_label=&#8221;2004&#8243; _builder_version=&#8221;3.2&#8243; body_text_color=&#8221;#ffffff&#8221; background_color=&#8221;#1e73be&#8221; background_size=&#8221;initial&#8221; background_position=&#8221;top_left&#8221; background_repeat=&#8221;repeat&#8221; custom_css_main_element=&#8221;font-size: 15px;||line-height: 1.5;&#8221; use_border_color=&#8221;off&#8221; border_color=&#8221;#ffffff&#8221; border_style=&#8221;solid&#8221; _i=&#8221;10&#8243; _address=&#8221;0.1.0.10&#8243;]<\/p>\n<ul>\n<li>Initial Capital Raised and Company Registered for M-MOS Semiconductor Sdn. Bhd.<\/li>\n<li>Design and Prototype Started on 200mm Technology with 0.2um trench<\/li>\n<\/ul>\n<p>[\/et_pb_testimonial][\/et_pb_column][\/et_pb_row][\/et_pb_section]<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Milestones Release CSP common drain and single chip technology Release Low Qg technology (\u226430V) N channel in production Customize projects launched and moved into production Development of deep trench process which enables the capability of manufacturing Chip Scale Package Development of Solid State Relay technology. Development of low Qg technology (\u226430V) with Thick Bottom Oxide [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"_et_pb_use_builder":"on","_et_pb_old_content":"","_et_gb_content_width":""},"_links":{"self":[{"href":"https:\/\/staging.m-mos.com\/v3\/wp-json\/wp\/v2\/pages\/155"}],"collection":[{"href":"https:\/\/staging.m-mos.com\/v3\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/staging.m-mos.com\/v3\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/staging.m-mos.com\/v3\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/staging.m-mos.com\/v3\/wp-json\/wp\/v2\/comments?post=155"}],"version-history":[{"count":19,"href":"https:\/\/staging.m-mos.com\/v3\/wp-json\/wp\/v2\/pages\/155\/revisions"}],"predecessor-version":[{"id":503,"href":"https:\/\/staging.m-mos.com\/v3\/wp-json\/wp\/v2\/pages\/155\/revisions\/503"}],"wp:attachment":[{"href":"https:\/\/staging.m-mos.com\/v3\/wp-json\/wp\/v2\/media?parent=155"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}